An integrated photoconductive detector and waveguide structure
- 15 January 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (2) , 149-151
- https://doi.org/10.1063/1.91410
Abstract
A new photoconductive detector is described that uses the previously reported optical field effect transistor structure. The detector has good sensitivity (photoconductive gain of ∼5) and high speed (∼150 psec). Light was coupled to this detector via a 7059 glass over SiO2 waveguide. The overall coupling efficiency including losses in endfire coupling was about 40%.Keywords
This publication has 1 reference indexed in Scilit:
- GaAs m.e.s.f.e.t.: a high-speed optical detectorElectronics Letters, 1977