Fluctuations in Schottky barrier heights
- 15 February 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (4) , 980-983
- https://doi.org/10.1063/1.333153
Abstract
A double Schottky barrier is often formed at the grain boundary in polycrystalline semiconductors. The barrier height is shown to fluctuate in value due to the random nature of the impurity positions. The magnitude of the fluctuations is 0.1 eV, and the fluctuations cause the barrier height measured by capacitance to differ from the one measured by electrical conductivity.This publication has 5 references indexed in Scilit:
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