Annealing of N-type germanium irradiated with 500 keV electrons at 6 K

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Abstract
An annealing stage in the temperature range 6-14 K of irradiated germanium was studied in succession to the work reported at the Dubrovnik Conference. In this study, it was revealed that the fractional amount of annealed defects in the stage increases with increasing impurity concentration. The annealing was found to be governed by the first order kinetics with the activation energy of 4.2 meV. The fractional concentration of the defects left after room temperature annealing is also dependent on impurity concentration of the sample. It increases with impurity concentration and the fraction calculated from the change in conductivity is almost equal to that of the defects annealed in the 6-14 K stage. This suggests that the primary defect is transformed into some stable defect in the 6-14 K stage and this defect is stable against room temperature annealing. The observed phenomena can be understood with Watkins model that self interstitial atom replaces the substitutional impurity atom.