Small-signal admittance of the insulator- n type-gallium-arsenide interface region
- 10 August 1972
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 8 (16) , 419-421
- https://doi.org/10.1049/el:19720304
Abstract
Capacitance/voltage characteristics of metal-insulator-semiconductor n type gallium arsenide differ considerably from the normal behaviour as observed with silicon. A trap model for the gallium-arsenide-surface region is proposed. The frequency dependence of the derived small-signal capacitance and conductance is verified by measurements.Keywords
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