Ourmazd and Cunningham reply
- 29 October 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (18) , 2318
- https://doi.org/10.1103/physrevlett.65.2318
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.65.2318Keywords
This publication has 7 references indexed in Scilit:
- Does luminescence show semiconductor interfaces to be atomically smooth?Applied Physics Letters, 1990
- Quantifying the Information Content of Lattice ImagesScience, 1989
- Chemical Mapping of Semiconductor Interfaces at Near-Atomic ResolutionPhysical Review Letters, 1989
- Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structuresJournal of Crystal Growth, 1989
- High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxyJournal of Applied Physics, 1987
- Photoluminescence study of interface defects in high-quality GaAs-GaAlAs superlatticesJournal of Applied Physics, 1986
- X-ray diffraction study of interdiffusion and growth in (GaAs)n(AlAs)m multilayersJournal of Applied Physics, 1980