Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110)
- 1 April 2005
- journal article
- Published by Elsevier in Computational Materials Science
- Vol. 33 (1-3) , 148-152
- https://doi.org/10.1016/j.commatsci.2004.12.053
Abstract
No abstract availableKeywords
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