Energetics of quantum antidot states in the quantum Hall regime
- 15 February 1998
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (8) , R4273-R4276
- https://doi.org/10.1103/physrevb.57.r4273
Abstract
We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling linewidths as a function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot-bound states, self-consistent edge electric field, and edge excitation drift velocity. DOI: http://dx.doi.org/10.1103/PhysRevB.57.R4273 © 1998 The American Physical SocietyKeywords
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This publication has 12 references indexed in Scilit:
- Line shape of resonant tunneling between fractional quantum Hall edgesPhysical Review B, 1997
- The Aharonov-Bohm effect in the fractional quantum Hall regimeSurface Science, 1996
- Activation energy in the early stage of electromigration in Al-1% Si/TiN/Ti bamboo linesSemiconductor Science and Technology, 1995
- Resonant Tunneling in the Quantum Hall Regime: Measurement of Fractional ChargeScience, 1995
- Magnetoconductance of a nanoscale antidotPhysical Review B, 1994
- Electrostatics of edge channelsPhysical Review B, 1992
- SINGLE-ELECTRON TUNNELING IN DOUBLE-BARRIER NANOSTRUCTURESInternational Journal of Modern Physics B, 1992
- Evidence for the influence of electron-electron interaction on the chemical potential of the two-dimensional electron gasPhysical Review B, 1990
- Density of states of 2D electron gas and width of the plateau of IQHESolid State Communications, 1988
- Direct measurement of the density of states of a two-dimensional electron gasPhysical Review B, 1985