Extended x-ray absorption fine-structure studies of semiconductor structure

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Abstract
New advances and applications of extended x-ray absorption fine-structure spectroscopy are discussed, including (a) the investigation of the site and local bond lengths of Fe impurities implanted into Si, where it is shown that the first coordination shell expands about the impurity atom while the second shell contracts; (b) the determination that the local Mn–Se and Zn–Se bond lengths in the diluted magnetic semiconductor Zn1−xMnxSe are constant within 0.01 Å even though the lattice constant as determined by x-ray diffraction varies by ∼0.1 Å; (c) the demonstration that the ferroelectric phase transition in Pb1−xGexTe has an order–disorder as well as displacive character; and (d) preliminary results showing the feasibility of nondestructive measurement of a ‘‘buried’’ Al/GaAs interface.

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