Phonon replicas of bound exciton recombination

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Abstract
The relative intensities of the phonon replicas of the optical recombination line of a shallow exciton bound to an ionized donor in a semiconductor with nondegenerate bands are calculated in the effective-mass approximation. Polar coupling of the electron and hole to the longitudinal-optical phonon is assumed. The intensity ratio of the successive phonon replicas is determined by a functional of the bound-exciton envelope. The functional is a monotonic function of the electron to hole effective-mass ratio.