Very low threshold buried ridge structure lasers emitting at 1.3 μm grown by low pressure metalorganic chemical vapor deposition
- 15 January 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (2) , 131-133
- https://doi.org/10.1063/1.95710
Abstract
GaInAsP‐InP buried ridge structure lasers emitting at 1.3 μm have been fabricated on material grown completely by low pressure metalorganic chemical vapor deposition. These lasers have low threshold (11 mA), exhibit linear (kink‐free) light‐current characteristics up to high powers (10 mW/facets), and can be operated at high temperatures (70 °C). Excellent uniformity over 10 cm2 has been obtained, and an external quantum efficiency of 60% for two faces has been measured.Keywords
This publication has 3 references indexed in Scilit:
- cw operation of 1.57-μm GaxIn1−xAsyP1−yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1984
- A Schottky-barrier-delineated stripe structure for a GaInAsP-InP cw LaserApplied Physics Letters, 1981
- High-power fundamental-transverse-mode strip buried heterostructure lasers with linear light-current characteristicsApplied Physics Letters, 1978