High-power subnanosecond switch
- 11 June 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (12) , 422-423
- https://doi.org/10.1049/el:19810293
Abstract
A triggering mechanism, unconnected with carrier transfer effects at long distances, for power commutation of 105–106 W in the subnanosecond range, is believed to have been found from the study of the avalanche breakdown process. The switching time does not increase when the diodes are connected in series.Keywords
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