An investigation of the optical constants and band gap of chromium disilicide
- 1 February 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (3) , 839-844
- https://doi.org/10.1063/1.340078
Abstract
Polycrystalline thin films of chromium disilicide were grown on silicon substrates. An analysis of the absorption coefficient data indicates that CrSi2 is a semiconductor with an indirect forbidden energy gap of slightly less than 0.35 eV. Measurements of the activation energy of the intrinsic conductivity confirm this result.This publication has 19 references indexed in Scilit:
- Growth and characterization of transition metal silicidesProgress in Crystal Growth and Characterization, 1979
- Determination of Optical Constants from Intensity Measurements at Normal IncidenceApplied Optics, 1968
- Infrared Reflectivity of Semiconducting FeSi2Physica Status Solidi (b), 1968
- Electrical and Optical Properties of Epitaxial Films of PbS, PbSe, PbTe, and SnTePhysical Review B, 1965
- Determination of Refractive Index and Correction to Effective Electron Mass in PbTe and PbSeProceedings of the Physical Society, 1963
- Relation Between Surface Roughness and Specular Reflectance at Normal IncidenceJournal of the Optical Society of America, 1961
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958
- Optical Properties of Thin Films of Cadmium SulfideJournal of the Optical Society of America, 1954
- Optical Effects in Bulk Silicon and GermaniumPhysical Review B, 1950
- The Optical Constants of Germanium in the Infra-Red and VisiblePhysical Review B, 1949