Co-integration of GaAs MESFET and Si CMOS circuits
- 1 September 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (9) , 444-446
- https://doi.org/10.1109/55.6940
Abstract
Co-integration of GaAs MESFET and Si CMOS circuits is demonstrated using GaAs-on-Si epitaxial growth on prefabricated Si wafers. This is thought to be the first report of circuit-level integration of the two types of devices in a coplanar structure. A 2- mu m gate Si CMOS ring oscillator has shown a minimum delay of 570 ps/gate, whereas on the same wafer a 1- mu m gate GaAs MESFET buffered-FET-logic (BFL) ring oscillator has a minimum delay of only 70 ps/gate. A composite ring oscillator consisting of Si CMOS invertors and GaAs MESFET invertors connected in a ring has been successfully fabricated.Keywords
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