Random-walk treatment of carrier diffusion with surface recombination
- 15 October 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (8) , 3241-3243
- https://doi.org/10.1063/1.339328
Abstract
The random-walk formulation of diffusion of a particle in a lossy medium is extended to include partially reflecting boundaries. A relationship between the reflection coefficient and the surface recombination velocity for minority carriers in a semiconductor is derived. This result is verified by numerical test using a one-dimensional problem that has an exact algebraic solution.This publication has 3 references indexed in Scilit:
- Simulation of carrier diffusion with random walksJournal of Applied Physics, 1987
- Monte Carlo simulation of the photoelectron crosstalk in silicon imaging devicesIEEE Transactions on Electron Devices, 1985
- Latch-up and image crosstalk suppression by internal getteringIEEE Transactions on Electron Devices, 1984