Profile studies of ion-implanted MESFET's

1 December 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 30 (12) , 1844-1849
https://doi.org/10.1109/t-ed.1983.21459

Abstract

A study of ion-implanted MESFET performance as a function of the implantation energy and fluency, and including the effects of deep-level trapping-state concentrations in the substrate, has been conducted. Carrier concentrations as a function of depth are determined through the use of LSS theory and a profiling model. An analytic device model, which computes both dc and RF characteristics, is then employed to predict MESFET performances. The study includes the effects of depth-dependent transport properties and has indicated a number of design rules for the fabrication of optimized ion-implanted devices.

Keywords

FIELD EFFECT TRANSISTOR
DESIGN RULES
NEODYMIUM
RADIO FREQUENCY
EQUIVALENT CIRCUIT
FABRICATION
ION IMPLANTATION
SCHOTTKY DIODE
ELECTRONS
DESIGN OPTIMIZATION
NETWORK ANALYSIS
PREDICTIVE MODELS
MONTE CARLO METHODS

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