Channeling of boron ions into silicon
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (7) , 323-325
- https://doi.org/10.1063/1.89384
Abstract
Channeled and random distributions of boron ions implanted over the energy range 50 keV–1.8 MeV into silicon have been measured using the differential capacitance technique. When implantations are performed along the 〈110〉 or 〈111〉 axis, profiles exhibit a strong orientation dependance. The best channeled profiles shows that more than 70% of the implanted dose is in the channeled peak.Keywords
This publication has 6 references indexed in Scilit:
- Channeling and dechanneling of ion-implanted phosphorus in siliconJournal of Applied Physics, 1973
- Peripheral and diffused layer effects on doping profilesIEEE Transactions on Electron Devices, 1972
- Charge Exchange Cross Sections for Electron Loss from B+, P+, and N+ on N2Journal of Applied Physics, 1971
- Diode edge effect on doping-profile measurementsIEEE Transactions on Electron Devices, 1970
- Channeling of medium-mass ions through siliconCanadian Journal of Physics, 1968
- Location of Shoulders in Channeling PhenomenaPhysical Review B, 1968