Growth effects of In 0.53 Ga 0.47 As on InP structured substrates
- 8 July 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (14) , 613-614
- https://doi.org/10.1049/el:19820419
Abstract
LPE growth studies of In0.53Ga0.47As on structured InP substrates orientated in the (100) and (111)B planes have been carried out. A reluctance to grow in the [111]A and [111]B directions has been found while nucleation readily occurs on (100) faces and rounded surfaces. Selective growth in etched channels was possible without masking.Keywords
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