A transient method of thermal characterization of double heterostructure laser diodes
- 31 March 1997
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 28 (3) , 301-312
- https://doi.org/10.1016/s0026-2692(96)00033-x
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Thermal characteristics of blue-green II-VI semiconductor lasersJournal of Applied Physics, 1994
- Thermal Diffusivity Measurement of GaAs/AlGaAs Thin-Film StructuresJournal of Heat Transfer, 1994
- Technique for lateral temperature profiling in optoelectronic devices using a photoluminescence microprobeApplied Physics Letters, 1992
- Comparison of the facet heating behavior between AlGaAs single quantum-well lasers and double-heterojunction lasersApplied Physics Letters, 1992
- Evidence for current-density-induced heating of AlGaAs single-quantum-well laser facetsApplied Physics Letters, 1991
- Influence of local heating on current-optical output power characteristics in Ga1−xAlxAs lasersJournal of Applied Physics, 1986
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Thermal performance and limitations of silicon–substrate packaged GaAs laser arraysApplied Optics, 1978
- Low threshold current proton-isolated (GaAl)As double heterostructure lasersOptical and Quantum Electronics, 1977
- Temperature Distributions in the GaAs-AlGaAs Double-Heterostructure Laser below and above the Threshold CurrentJapanese Journal of Applied Physics, 1975