Magnetic field dependence of gate voltage and current in a GaAs-heterostructure in the quantum hall regime
- 1 April 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 62 (2) , 89-91
- https://doi.org/10.1016/0038-1098(87)91118-5
Abstract
No abstract availableKeywords
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