Spatially-resolved photoluminescence study of InP: Fe substrates from different suppliers
- 1 June 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 102 (4) , 769-774
- https://doi.org/10.1016/0022-0248(90)90841-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Correlation between photoluminescence and electrical local fluctuations in liquid encapsulated Czochralski semi-insulating GaAs substratesMaterials Science and Engineering: B, 1989
- Characterization of Fe-doped semi-insulating InP by low temperature and room temperature spatially resolved photoluminescenceJournal of Crystal Growth, 1989
- Growth and properties of InP single crystals grown by the magnetic field applied LEC methodJournal of Crystal Growth, 1986
- Growth and characterization of isoelectronically double-doped semi-insulating InP(Fe) single crystalsJournal of Crystal Growth, 1986