Fully implanted GaAs millimetre-wave mixer diode using high energy implantation
- 2 July 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (14) , 725-727
- https://doi.org/10.1049/el:19870515
Abstract
Fully implanted GaAs millimetre-wave planar mixer diodes, suitable for monolithic integration, have been fabricated and tested. Multiple energy implantation, having a maximum energy of 6 MeV, was used to form the 3 μm-thick active layer. The DC and RF characteristics were comparable to state-of-the-art GaAs mixer diodes fabricated on epitaxial layers.Keywords
This publication has 1 reference indexed in Scilit:
- MIT Radiation Laboratory SeriesPhysics Today, 1948