11.5% solar conversion efficiency in the photocathodically protected p-InP/V3+-V2+-HCI/C semiconductor liquid junction cell
- 15 February 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (4) , 282-284
- https://doi.org/10.1063/1.92307
Abstract
Oxidation of the surface of p‐InP with alkaline peroxide and treatment with dilute potassium cyanide increase the efficiency of the p‐InP/V2+−V3+ ‐HCl/C cell to 11.5%. The open circuit voltage of the cell follows the redox potential of the solution over a 0.5 V range. The lack of voltage pinning is consistent with photoemission studies of Spicer e t a l., showing that adsorption of oxygen on p‐InP raises the surface fermi level from a position near the valence band maximum to noe near the conduction band minimum.Keywords
This publication has 17 references indexed in Scilit:
- An efficient photocathode for semiconductor liquid junction cells: 9.4% solar conversion efficiency with p-InP/VCl3-VCl2-HCl/CJournal of the American Chemical Society, 1980
- Combined Ruthenium Lead Surface Treatment of Gallium Arsenide PhotoanodesBerichte der Bunsengesellschaft für physikalische Chemie, 1980
- Semiconductor electrodes. 24. Behavior of photoelectrochemical cells based on p-type gallium arsenide in aqueous solutionsJournal of the American Chemical Society, 1980
- The concept of Fermi level pinning at semiconductor/liquid junctions. Consequences for energy conversion efficiency and selection of useful solution redox couples in solar devicesJournal of the American Chemical Society, 1980
- Photoreduction at illuminated p-type semiconducting silicon photoelectrodes. Evidence for Fermi level pinningJournal of the American Chemical Society, 1980
- Reduction of GaAs surface recombination velocity by chemical treatmentApplied Physics Letters, 1980
- Effect of Ruthenium Ions on Grain Boundaries in Gallium Arsenide Thin Film Photovoltaic DevicesJournal of the Electrochemical Society, 1980
- 7.3% Efficient thin-film, polycrystalline n-gallium arsenide semiconductor liquid junction solar cellJournal of the American Chemical Society, 1979
- Effects of Cations on the Performance of the Photoanode in the n ‐ GaAs | K 2Se ‐ K 2Se2 ‐ KOH | C Semiconductor Liquid Junction Solar CellJournal of the Electrochemical Society, 1979
- Enhanced photoelectrochemical solar-energy conversion by gallium arsenide surface modificationApplied Physics Letters, 1978