Liquid Phase Epitaxial Growth of CuGaSe2 on ZnSe
- 1 August 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (8)
- https://doi.org/10.1143/jjap.20.1401
Abstract
Liquid phase epitaxy of CuGaSe2 layers on ZnSe (111)A substrates with Bi and Pb solvents is described. Structural and compositional properties of the epilayers were investigated by means of X-ray diffraction, electron probe microanalysis and photoluminescence. The epilayers are composed of two layers of CuGaSe2-ZnSe solid solutions. The upper layers have the chalcopyrite structure whose lattice parameters are nearly the same as those of stoichiometric CuGaSe2, but the lower layers are considered to have the zincblende structure. Photoluminescence spectra with emission peaks at 750 and 800 nm were observed at 77 K for the upper and the lower layers, respectively.Keywords
This publication has 6 references indexed in Scilit:
- Lattice deformations and misfit dislocations in GaInAsP/InP double-heterostructure layersApplied Physics Letters, 1978
- Crystal data for CuGaSe2Journal of Applied Crystallography, 1977
- Preparation and characteristics of CuGaSe2/CdS solar cellsApplied Physics Letters, 1977
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- Preparation and properties of green-light-emitting CdS–CuGaS2 heterodiodesJournal of Applied Physics, 1974
- Preparation and crystal growth of materials in the pseudo-binary CuInSe2ZnSe and CuGaSe2ZnSe systemsMaterials Research Bulletin, 1973