Determination of interface properties between a depleted heteroepitaxial layer and a substrate from capacitance measurements
- 1 January 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (1) , 244-251
- https://doi.org/10.1063/1.359384
Abstract
A method for the determination of interface properties between a depleted heteroepitaxial layer and a substrate is presented. The method is based on the measurement of the zero bias capacitance of a metal gate that forms a Schottky contact with the depleted epilayer. The interface charge density can be extracted regardless of the exact values of the energy band discontinuities. A microscopic electrostatic analysis of the interface is presented which takes into account the effects of interface charges and interface dipoles. Experimental results are presented for the case of ZnTe epilayers grown by metal organic chemical vapor deposition on CdTe substrates.This publication has 5 references indexed in Scilit:
- UV photon assisted control of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayersJournal of Electronic Materials, 1993
- Photon assisted reduction of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayersJournal of Applied Physics, 1993
- Determination of the interface charge between an epilayer and a substrate using capacitance-voltage measurementsJournal of Applied Physics, 1992
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980
- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968