MBE grown high quality GaN films and devices
- 28 February 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (2) , 169-175
- https://doi.org/10.1016/s0038-1101(96)00160-8
Abstract
No abstract availableKeywords
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- Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substratesApplied Physics Letters, 1983