Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
- 15 June 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (25) , 3980-3982
- https://doi.org/10.1063/1.1379789
Abstract
The impact of the Ga/N ratio on the structure and electrical activity of threading dislocations in GaN films grown by molecular-beam epitaxy is reported. Electrical measurements performed on samples grown under Ga-rich conditions show three orders of magnitude higher reverse bias leakage compared with those grown under Ga-lean conditions. Transmission electron microscopy (TEM) studies reveal excess Ga at the surface termination of pure screw dislocations accompanied by a change in the screw dislocation core structure in Ga-rich films. The correlation of transport and TEM results indicates that dislocation electrical activity depends sensitively on dislocation type and growth stoichiometry.Keywords
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