Backscattering of electrons from gallium arsenide
- 1 November 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (11) , 4832-4834
- https://doi.org/10.1063/1.1661031
Abstract
The percentage of backscattered electrons from a 50–4000‐eV primary electron beam was measured for clean (100), (110), (111)A, and (111)B GaAs surfaces. The incident beam angle vaired between 0° and 60° from the surface normal. The influence of cesium and cesium oxide layers on the backscattering coefficient was investigated for (100) GaAs.This publication has 10 references indexed in Scilit:
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