An AES study of the electron-induced dissociation of SiO2
- 1 July 1986
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 9 (5) , 331
- https://doi.org/10.1002/sia.740090515
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Interface trap generation in silicon dioxide when electrons are captured by trapped holesJournal of Applied Physics, 1983
- Ion Desorption by Core-Hole Auger DecayPhysical Review Letters, 1978
- AUGER SPECTRA OF SiO2 SURFACE DEFECT CENTERSPublished by Elsevier ,1978
- A study of the charging and dissociation of SiO2 Surfaces by AESSurface Science, 1977
- Electronic structure ofcenters in SiPhysical Review B, 1975