Low-temperature fabrication of MOSFET's Utilizing a microwave-excited plasma oxidation technique
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (1) , 38-40
- https://doi.org/10.1109/EDL.1986.26284
Abstract
A microwave-excited plasma oxidation technique is applied to gate oxide formation of MOSFET's and subsequent processes are carried out essentially at temperatures below 600°C. These MOSFET's compare favorably with conventional ones fabricated by using a high-temperature processes in terms of field-effect mobility and subthreshold characteristics.Keywords
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