Highly Beryllium-Doped and Lattice-Matched GaInAsP/InP Growth by Chemical Beam Epitaxy (CBE)
- 1 March 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (3R)
- https://doi.org/10.1143/jjap.29.562
Abstract
Highly Be-doped (>1019 cm-3) 1.45 µm-wavelength GaInAsP was grown by chemical beam epitaxy with a solid Be source. The hole concentration for both GaInAsP and InP was linearly related to the Be effusion cell temperature. In spite of high doping levels, neither obvious lattice mismatch nor surface degradation was observed. A stripe contact laser was also successfully fabricated using the results obtained.Keywords
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