Effect of gettering on leakage current in shallow junctions
- 15 March 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (6) , 519-521
- https://doi.org/10.1063/1.93989
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Shallow junctions by high-dose As implants in Si: experiments and modelingJournal of Applied Physics, 1980
- Arsenic Ion‐Implanted Shallow JunctionJournal of the Electrochemical Society, 1980
- Annealing properties of ion-implanted p-n junctions in siliconJournal of Applied Physics, 1974