GaAs microwave devices and circuits with submicron electron-beam defined features

1 May 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 71 (5) , 667-675
https://doi.org/10.1109/PROC.1983.12648

Abstract

This paper describes the fabrication and application of GaAs FET's, both as discrete microwave devices and as the key active components in monolithic microwave integrated circuits. The performance of these devices and circuits is discussed for frequencies ranging from 3 to 25 GHz. The crucial fabrication step is the formation of the submicron gate by electron-beam lithography.

Keywords

GALLIUM ARSENIDE
MICROWAVE DEVICES
MICROWAVE CIRCUITS
FABRICATION
APPLICATION SPECIFIC INTEGRATED CIRCUITS
MICROWAVE INTEGRATED CIRCUITS
MICROWAVE FET INTEGRATED CIRCUITS
MMICS
MONOLITHIC INTEGRATED CIRCUITS
FREQUENCY

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