Optical properties of submonolayer InAs/InP quantum dots on vicinal surfaces
- 15 December 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (12) , 6789-6792
- https://doi.org/10.1063/1.371728
Abstract
We have investigated the effect of the misorientation (001) InP substrates on the optical properties of submonolayers of InAs in InP grown by metalorganic chemical vapor deposition.InAssubmonolayers were systematically studied using low temperature photoluminescence(PL),photoluminescence excitation spectroscopy and temperature-dependent, excitation density PL. For submonolayer samples with oriented substrates, the observed PLlinewidths and energies are satisfactorily explained within a two-dimensional (2D) quantum well picture. The formation of InAs isolated quantum dots which is found in the submonolayer samples with misoriented substrates towards (110) orientations, however, results in 0D exciton localization.This publication has 18 references indexed in Scilit:
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