Temperature dependence of breakdown voltage in silicon abrupt p-n junctions

1 June 1971

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 18 (6) , 391-393
https://doi.org/10.1109/T-ED.1971.17210

Abstract

Temperature dependence of breakdown voltage in silicon abrupt p⁺-n junctions has been calculated using a modified Baraff theory [1]-[3] and measured experimentally from 77°K to 500°K, with substrate doping from 10¹⁵cm^-3to 10¹⁸cm^-3. Experimental data are in good agreement with the results of theoretical calculations. These results strongly substantiate the validity of the modified Baraff theory which has been pointed out by Sze and Crowell.

Keywords

CATHODES
GALLIUM ARSENIDE
SILICON
CURRENT DENSITY
BREAKDOWN VOLTAGE
ANODES
ELECTRON MOBILITY

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