Temperature effect on low threshold voltage ion-implanted GaAs MESFETs
- 1 October 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (20) , 760-761
- https://doi.org/10.1049/el:19810534
Abstract
The temperature dependence of the characteristics of ion-implanted GaAs MESFETs has been studied. The observed effects are mainly due to the p-n-junction-loke interface between the channel active layer and the semi-insulatning substrate. Good agreement between theoretical calculations and the experimental results is obtained.Keywords
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