GaInAsP/InP semiconductor vertical GRIN-lens for semiconductor optical devices
- 1 May 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (5) , 601-604
- https://doi.org/10.1109/68.285554
Abstract
A GaInAsP/InP vertical GRIN-lens (VGL), which is suitable for monolithic integration with semiconductor laser diodes (LDs) or semiconductor laser amplifiers (SLAs), was fabricated for the first time. A narrow FWHM of vertical far-field pattern of 6 degree was experimentally obtained with 8 layers of GRIN core region (8 μm thick) and InP cladding layers. An integration of this VGL with a taper waveguide SLA with the output width of 10 μm was also demonstrated.Keywords
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