InAs/Ga1-xInxSb superlattices for infrared applications

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Abstract
We report the successful growth of EnAs/Gai_InSb strained-layer superlattices, which have been proposed for far-infrared applications. Samples were grown by molecular beam epitaxy and characterized by reflection high energy electron diffraction, transmission electron microscopy, x-ray diffraction, photoluminescence, and photoconductivity. Excellent structural quality is achieved for superlattices grown on thick, strain relaxed GaSb buffer layers on GaAs substrates at fairly low substrate temperatures (< 400 °C). Photoluminescence and photoconductivity measurements indicate that the energy gaps of the strained-layer superlattices are smaller than those of InAs/GaSb superlattices with the same layer thicknesses, in agreement with the theoretical predictions of Smith and Mailhiot.1'2 In the case of a 45 A/28 A InAs/Gao.751no25Sb superlattice, an energy gap of 80meV (> 15 jim) is measured. These resuits suggest that far-infrared cutoff wavelengths are compatible with the thin superiattice layers required for strong optical absorption in type-Il superlattices.

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