Electric properties of Ti-Si-N thin cermet films deposited in a triode sputtering system with a hot cathode
- 1 August 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 162, 111-117
- https://doi.org/10.1016/0040-6090(88)90199-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Properties of silicon nitride thin films obtained by reactive sputteringThin Solid Films, 1980
- Properties of TiNxfilms reactively sputtered in an argon-nitrogen atmosphereThin Solid Films, 1979
- Structural and electrical properties of granular metal filmsAdvances in Physics, 1975
- Compositional Determination of rf Co-Sputtered Multicomponent SystemsJournal of Vacuum Science and Technology, 1971
- Electrical and Structural Properties of Mixed Chromium and Silicon Monoxide FilmsJournal of Applied Physics, 1968
- Evaporated cermet resistorsThin Solid Films, 1967