The Urbach rule for the PbO-SiO2 glasses
- 1 February 2000
- journal article
- Published by Pleiades Publishing Ltd in Physics of the Solid State
- Vol. 42 (2) , 230-235
- https://doi.org/10.1134/1.1131151
Abstract
An analysis is made of the behavior of optical spectra of lead-silicate glasses, with variable lead content near the UV absorption edge, and within the 80–470-K range. A generalized formulation of the modified Urbach rule, applicable to glassy materials within a broad temperature range, is proposed for the interpretation of experimental spectral relations. Within this approach, the effective energies of the phonons responsible for the temperature-induced shift of the Urbach edge have been calculated. It is shown that the spectral and temperature parameters of the modified Urbach rule are structure-sensitive, and that their concentration behavior reflects the change of the type of short-range order in the glassy matrix.Keywords
This publication has 14 references indexed in Scilit:
- Chapter 2 The Optical Absorption Edge of a-Si: HPublished by Elsevier ,2008
- Absorption edge and internal electric fields in amorphous semiconductorsPublished by Elsevier ,2003
- The phonon-assisted shift of the energy levels of localized electron states in statically disordered solidsPhysica B: Condensed Matter, 1999
- The relationship between the distribution of electronic states and the optical absorption spectrum of an amorphous semiconductor: An empirical analysisJournal of Applied Physics, 1997
- Localized states in wide-gap glasses. Comparison with relevant crystalsJournal of Non-Crystalline Solids, 1995
- Urbach edge of crystalline and amorphous silicon: a personal reviewJournal of Non-Crystalline Solids, 1992
- Disorder and the Optical-Absorption Edge of Hydrogenated Amorphous SiliconPhysical Review Letters, 1981
- Temperature Dependence of the Absorption Edge in Crystalline and Vitreous As2S3Physica Status Solidi (b), 1974
- Electronic Processes in Non-Crystalline MaterialsPhysics Today, 1972
- Temperature Dependence of the Energy Gap in SemiconductorsPhysical Review B, 1951