Electron microscopy of cuprous oxide island growth

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Abstract
The growth of Cu2O islands on (111) surfaces of Cu foils at a pressure of 8 × 10−4 torr and in the temperature range 250°–400°C has been followed up to 55% coverage by in situ transmission electron microscopy and high resolution electron microscopy. The oxide islands grow into the copper in both parallel and twin orientations which are different in shape, degree of misorientation, internal stress and growth rate. For islands grown at 250°C it appears that the oxide-metal interface is determined by crystallographic planes in the oxide rather than in the copper. No evidence of any strong influence of dislocations or other lattice defects in the copper was observed in the nucleation.