Growth of single crystal bcc α-Fe on ZnSe via molecular beam epitaxy
- 23 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (25) , 1756-1758
- https://doi.org/10.1063/1.96778
Abstract
Molecular beam epitaxy methods have been used to grow high quality single crystal films of bcc α-Fe on fcc (zinc blende) ZnSe (001) epilayers on GaAs (001). These films were characterized by reflection high-energy electron diffraction, Auger electron spectroscopy, ferromagnetic resonance (FMR), and vibrating sample magnetometry. The FMR linewidth and measured coercive field are significantly smaller than previously reported for single crystal Fe films.Keywords
This publication has 7 references indexed in Scilit:
- Wide gap II-VI superlattices of ZnSe-Zn1−xMnxSeApplied Physics Letters, 1985
- Molecular beam epitaxy growth of ZnSe on (100)GaAs by compound source and separate source evaporation: A comparative studyJournal of Vacuum Science & Technology B, 1985
- Surface structures and properties of ZnSe grown on (100)GaAs by molecular beam epitaxyApplied Physics Letters, 1984
- Ferromagnetic resonance studies of very thin epitaxial single crystals of ironJournal of Applied Physics, 1982
- Diluted magnetic semiconductors: An interface of semiconductor physics and magnetism (invited)Journal of Applied Physics, 1982
- Molecular beam epitaxial growth of single-crystal Fe films on GaAsApplied Physics Letters, 1981
- Temperature variation of ferromagnetic relaxation in thetransition metalsPhysical Review B, 1974