8 channel InGaAs/InP quantum well asymmetric Fabry-Perot modulator hybridised with foundry VLSI silicon CMOS drive circuits

13 August 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (17) , 1658-1660
https://doi.org/10.1049/el:19921055

Abstract

The fabrication and performance of 8 element arrays of asymmetric Fabry-Perot reflective modulators in the InGaAsP material system driven directly from silicon VLSI circuits are reported. These arrays were solder bond hybridised onto CMOS driver circuits for chip level optical interconnect, and have demonstrated contrast ratios of 4.8 dB and reflectivity changes of 22% when driven directly from the CMOS circuit.

Keywords

CMOS DRIVE CIRCUITS
FOUNDRY VLSI
EIGHT CHANNEL TYPE
INGAAS-INP
INGAASP MATERIAL SYSTEM
CHIP LEVEL OPTICAL INTERCONNECT

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