An analytical model of the VBE-dependence of current-splitting in CMOS-compatible lateral bipolar transistors
- 31 August 1995
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (8) , 1543-1546
- https://doi.org/10.1016/0038-1101(95)00022-l
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- An improved analytical model for collector currents in lateral bipolar transistorsIEEE Transactions on Electron Devices, 1994
- Forward-voltage capacitance and thickness of p-n junction space-charge regionsIEEE Transactions on Electron Devices, 1987
- MOS transistors operated in the lateral bipolar mode and their application in CMOS technologyIEEE Journal of Solid-State Circuits, 1983
- Depletion-Layer Capacitance of p+n Step JunctionsJournal of Applied Physics, 1967