Evidence of interface trap creation by hot-electrons in AlGaAs/GaAs high electron mobility transistors

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Abstract
We report on the hot-electrons induced degradation in AIGaAs/GaAs high electron mobility transistors (HEMTs), consisting of a decrease in the drain current and an increase in the parasitic drain resistance. The amount of the degradation is proportional to the impact-ionization rate which is related to the electron energy. Transconductance dispersion measurements and drain leve I transient spectroscopy (DL TS) have been used to identify interface traps which are located at the AIGaAs/GaAs interface in the gate-drain access region and are the causes of the observed degradation

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