The self-organized In0.25Ga0.75As quantum dots grown by migration enhanced epitaxy
- 2 January 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 183 (3) , 279-283
- https://doi.org/10.1016/s0022-0248(97)00436-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Molecular-beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion lengthJournal of Crystal Growth, 1993
- Migration-enhanced epitaxy of GaAs and AlGaAsJournal of Crystal Growth, 1989