Crossover between hopping and tunnelling conduction in Au-SiO2films
- 10 October 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (28) , L751-L755
- https://doi.org/10.1088/0022-3719/17/28/007
Abstract
Recently, J. Klafter and P. Sheng (see ibid., vol.17, p.L93, 1984) analysed the temperature dependence of the DC resistivity of granular materials and predicted that the Mott exp(T0/T)1/4 behaviour should apply at low temperatures, and an activated behaviour at high temperatures. This is opposed to the view held by A.L. Efros and B.I. Shklovskii (1975) which predicts exp(T0/T)1/2 behaviour at low temperatures and the Mott law at high temperatures. Here the authors present data for co-sputtered Au-SiO2 films which support the Klafter and Sheng suggestion.Keywords
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