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  3. Radio frequency plasma etching of Si/SiO2 by Cl2/O2 : Improvements resulting from the time modulation of the processing gases
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  5. 10.1116/1.584938
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  3. Radio frequency plasma etching of Si/SiO2 by Cl2/O2 : Improvements resulting from the time modulation of the processing gases
  4. Cited-By
  5. 10.1116/1.584938

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