Selective etching of native oxide by dry processing using ultra clean anhydrous hydrogen fluoride
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 730-733
- https://doi.org/10.1109/iedm.1988.32916
Abstract
An ultraclean dry etching system using HF gas has been developed. It has been demonstrated experimentally that there exists a critical concentration of HF in N/sub 2/ gas for etching of various Si oxide films. The critical concentration for native oxide obtained in wet processing or UV O/sub 3/ organic contamination cleaning is lower than those for thermal oxide, CVD (chemical vapor deposition) oxide, and CVD BSG. The difference becomes large with decreasing moisture level. Based on the results obtained, dry processing using HF gas is proposed as a surface cleaning technique in the ULSI process.<>Keywords
This publication has 0 references indexed in Scilit: