Combining a scanning near-field optical microscope with a picosecond streak camera: Statistical analysis of exciton kinetics in GaAs single-quantum wells
- 29 April 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (18) , 3340-3342
- https://doi.org/10.1063/1.1477274
Abstract
Combining a low-temperature scanning near-field optical microscope with a picosecond streak camera allows us to measure the complete wavelength-time behavior at one spot on the sample within about 13 min at excitation powers of 100 nW. We use this instrument to measure the variation of relaxation times in disordered single-GaAs quantum wells with sample position.Keywords
This publication has 14 references indexed in Scilit:
- Quantum Mechanical Repulsion of Exciton Levels in a Disordered Quantum WellPhysical Review Letters, 2001
- Statistical analysis of near-field photoluminescence spectra of single ultrathin layers of CdSe/ZnSeApplied Physics Letters, 2000
- Experiments on the depolarization near-field scanning optical microscopeApplied Physics Letters, 1999
- Temperature-dependent exciton luminescence in quantum wells by computer simulationPhysical Review B, 1998
- Ultrafast measurement in GaAs thin films using NSOMUltramicroscopy, 1998
- Microphotoluminescence studies of single quantum dots. I. Time-resolved experimentsPhysical Review B, 1997
- Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structuresPhysical Review Letters, 1994
- Relaxation of a Single DNA Molecule Observed by Optical MicroscopyScience, 1994
- Ultrafast scanning probe microscopyApplied Physics Letters, 1993
- Temperature dependence of exciton lifetimes in GaAs/As single quantum wellsPhysical Review B, 1993