Pt4Si9 formation by hot substrate ion beam mixing
- 1 May 1988
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (9) , 4651-4654
- https://doi.org/10.1063/1.340118
Abstract
Direct, ion induced formation of metastable compounds in the Pt‐Si system has been investigated by implantation with Xe ions through the PtSi‐Si interface in the temperature range of 35–325 °C. The mixing increased parabolically with dose and exhibited an exponential dependence on reciprocal temperature with an apparent activation energy of about 0.11 eV. The mixed layer became progressively uniform in composition with increasing temperatures and a well‐defined surface layer with a composition of Pt4Si9 was obtained at relatively high temperatures. The Pt4Si9 phase was indexed as a hexagonal crystal structure and transformed back into PtSi and Si at temperatures above 550 °C by thermal steady‐state annealing.This publication has 17 references indexed in Scilit:
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